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PD-94401
RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2)
Product Summary
Part Number IRHSLNA57064 RDS(on) 6.1m QG 180nC
IRHSLNA57064 60V, N-CHANNEL
SMD-2
Description:
The SynchFet family of Co-Pack RAD-Hard MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. RAD-Hard MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of Military and Space applications.
Features:
n Co-Pack N-channel RAD-Hard MOSFET
and Schottky Diode
n Ideal for Synchronous Rectifiers in DC-DC n n n n
Converters up to 75A Output Low Conduction Losses Low Switching Losses Low Vf Schottky Rectifier Refer to IRHSNA57064 for Lower RDS(on)
Absolute Maximum Ratings
Parameter
Continuous Drain or Source Current Continuous Drain or Source Current Pulse Drain Current Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage VDS Drain-to-Source Voltage IF(AV)@VGS =12V, TC =25C Schottky and Body Diode Avg. Forward Current IF(AV)@VGS =12V, TC =100C Schottky and Body Diode Avg. Forward Current TJ, TSTG Operating Junction and Storage Temperature Range Package Mounting Surface Temperature Weight ID@ VGS = 12V, TC = 25C ID@ VGS = 12V, TC = 100C IDM PD @ TC = 25C 75* 75* 300 250 2.0 +20 60 75* 75* -55 to 150 300 (for 10sec) 3.3 (Typical)
Units A
W
W/C
V A C
g
* Current is limited by package For footnotes refer to the last page
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1
03/15/02
IRHSLNA57064
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS RDS(on) VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current
Min
60 -- 2.0 45 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- -- -- -- -- -- -- 6.1 4.0 -- 50 50 V m V S( ) A mA
Test Conditions
VGS = 0V, ID = 1.0mA VGS = 12V, ID = 45A VDS = VGS, ID = 1.0mA VDS > 15V, I DS = 45A VDS = 48V, VGS=0V VDS = 48V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID =45A, VDS = 30V VDD = 30V, ID = 45A, VGS =12V, RG = 2.35
IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
-- 100 -- -100 -- 180 -- 55 -- 65 -- 35 -- 125 -- 75 -- 50 6.6 --
nA nC
ns
nH
Measured from center of drain pad to center of source pad
Schottky Diode & Body Diode Ratings and Characteristics
Parameter
VSD Diode Forward Voltage
Min Typ Max Units
-- -- -- -- -- -- -- 0.93 -- 0.86 -- 0.76 -- 100 -- 210 7.95 --
Test Conditions
TJ = -55C, ID=45A, VGS = 0V TJ = 25C, ID= 45A, VGS = 0V TJ = 110C, ID=45A, VGS = 0V Tj = 25C, IF =45A, di/dt 100A/s VDS 30V Measured from center of drain pad to center of source pad (for Schottky only)
V
nS nC nH
trr Reverse Recovery Time QRR Reverse Recovery Charge LS + LD Total Inductance ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD
Thermal Resistance
Parameter
RthJC RthJC Junction-to-Case (MOSFET) Junction-to-Case (Schottky)
Min Typ Max
-- -- -- -- 0.5 0.7
Units
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the Website. For footnotes refer to the last page
2
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IRHSLNA57064
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
1000
100
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
5.0V
10
10
5.0V
1 0.1
20s PULSE WIDTH T = 25 C
J 10 100
1
1 0.1
20s PULSE WIDTH T = 150 C
J 1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
TJ = 150 C
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 75A
I D , Drain-to-Source Current (A)
1.5
100
TJ = 25 C
1.0
10
0.5
1 5.0
V DS = 25V 20s PULSE WIDTH 8.0 9.0 6.0 7.0 10.0
0.0 -60 -40 -20
VGS = 12V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRHSLNA57064
20
ID = 45A
VGS , Gate-to-Source Voltage (V)
16
VDS = 48V VDS = 30V VDS = 12V
12
8
4
0 0 50 100
FOR TEST CIRCUIT SEE FIGURE 13
150 200 250
QG , Total Gate Charge (nC)
Fig 5. Typical Gate Charge Vs. Gate-to-Source Voltage
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 5a. Basic Gate Charge Waveform
Fig 5b. Gate Charge Test Circuit
4
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IRHSLNA57064
200
LIMITED BY PACKAGE
VGS
150
VDS
RD
D.U.T.
+
RG
I D , Drain Current (A)
- VDD
12V
100
Pulse Width 1 s Duty Factor 0.1 %
Fig 7a. Switching Time Test Circuit
50
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
Fig 6. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 7b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.20 0.10 0.05 0.02 0.01
0.1
SINGLE PULSE (THERMAL RESPONSE)
0.01
0.001 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 1
PDM t1 t2
t1 , Rectangular Pulse Duration (sec)
Fig 8. Maximum Effective Transient Thermal Impedance, Junction-to-Case, MOSFET
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IRHSLNA57064
800
EAS , Single Pulse Avalanche Energy (mJ)
600
ID 33.5A 47.4A BOTTOM 75A TOP
400
200
0 25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
Fig 9. Maximum Avalanche Energy Vs. Drain Current
15V
V (B R )D SS tp
VD S
L
DR IV E R
RG
D.U .T.
IA S
+ V - DD
A
12V 20V
tp
0.01
IAS
Fig 9a. Unclamped Inductive Test Circuit
Fig 9b. Unclamped Inductive Waveforms
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IRHSLNA57064
MOSFET Body Diode & Schottky Diode Characteristics
100
Instantaneous Forward Current - I S (A)
10
Tj = 125C
Tj = 25C
Tj = -55C
1 0.0 0.2 0.4 0.6 0.8 1.0 Forward Voltage Drop - V SD (V)
Fig. 10 - Typical Forward Voltage Drop Characterstics
1
Thermal Response (Z thJC )
D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
0.01
0.001 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01
P DM t1 t2 1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case, Schottky
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IRHSLNA57064
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature Pulse width 300 s; Duty Cycle 2% 50% Duty Cycle, Rectangular
Case Outline and Dimensions -- SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 03/02
8
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